Process Capability Summary       Based on 13 years of GaAs business experiences and infrastructure, we have achieved       excellent manufacturing management system together with quality control (ISO9002 certified)      From our 3" wafer fab., we are processing more than 8000 wafers per month.            We have successfully transferred this intensive GaAs fab. process system to our 6" InGaP HBT      foundry. You may find our process capability data in the table below, we have been accumulating      statistical process control (SPC) data biweekly.      If you need further process data, please let us know by simply sending an inquiry mail. Parameter Unit LSL Target USL Nominal Cp Cpk Pp    Emitter Metal Thickness Å 1350  1500 1650 1494 1.48 1.43 1.36    Emitter Contact CD ㎛ 1.20 1.35 1.50 1.37 2.54 2.15 1.66    Base Metal Thickness Å 1940 2150 2360 2102 1.39 1.08 1.27    Base Contact CD ㎛ 1.35 1.50 1.65 1.52 1.69 1.49 1.13    Collector Metal Thickness Å 2580 2860 3140 2837 1.12 1.03 1.04    Collector Contact CD ㎛ 2.1 2.3 2.5 2.3 2.42 2.35 1.09    NiCr Thickness Å 257 270 283 274 3.26 2.31 1.71    SiN Thickness Å 950 1000 1050 1005 3.11 3.09 1.17    SiN Refractive Index 　 1.95 2.00 2.05 1.99 7.13 6.83 2.90    Wet Etch Thickness(EI) Å 1530 1800 2080 1830 1.13 1.03 0.95    Gold Plating Thickness(IM) ㎛ 1.0 1.3 1.6 1.36 2.74 2.15 2.66    Gold Plating Thickness(AB) ㎛ 3.4 4.2 5.0 4.35 1.56 1.27 1.56    Resin Coating Thickness ㎛ 10.8 12.0 13.2 12.0 2.52 2.50 2.45    Thickness after Grinding ㎛ 90 100 110 102.2 3.47 2.71 2.54    Thickness after Polishing ㎛ 85 95 105 97.7 2.70 1.97 2.12    Backside Via Hole CD ㎛ 65 75 85 75.9 3.61 3.29 3.21   Copyrightⓒ2000, Knowledge*on, Inc. All Rights Reserved.