High
Power - BVceo > 23 Volt
The value of BVceo is important in power amplifier (PA)
especially for High power demanding
applications such as Global System for Mobile Communications
(GSM) and Base Stations.
The High breakdown voltage gives flexibility in MMIC design of
high power.
Knowledge*on¡¯s
High Power HBT : BVceo > 23V
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Ideally meets the ruggedness
requirement in GSM specifications
(VSWR 10:1 with all Phase at Pin=12dBm,
Vcc=5V)
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Excellent response
characteristics of frequency: fT: 34GHz, fmax: 73GHz
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Power Added Efficiency (PAE): 47% - in case of 4 finger 2X20
devices
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Gain: 22dB - in case of 4 finger 2X20 devices
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Suitable for High Power circuit design
This high breakdown voltage shall be emphasized again as the important
parameter to prevent
both circuit and device level failures.
(1) For PA of GSM, DCS, and base station applications, we offer
High Power HBT model:
BVceo>20~24V, BVcbo=35~42V, BVebo=7V, DC gain=70~80
fT=34Ghz, fmax=73Ghz
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Fig.1 Breakdown voltage of high power device
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Fig.2
Common emitter short circuit current
gain (H21) and unilateral power
gain (U) of
2 x 20 um2 x 2-finger device at Ic = 22 mA
with Vce = 3 V
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Fig.3
Dependence of current gain cut-off frequency (fT)
and maximum
oscillation frequency (fMax) on
collector current of 2 x 20 um2 x
2-finger device
£ª VCE = 3.5 V, IC = 8 mA,
£ª P1dB,out = 17.2 dBm
£ª PAE @ 1dB = 46.8 %
£ª Linear Gain = 22 dB
Fig.4
Power characteristics of 2 x
20 um2 x 4-finger device
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