Kowledge*ON’s proprietary depleted InGaP ledge is formed between
emitter and base, thereby drastically reducing the surface recombination
current. The benefit of the ledge extends to device reliability by
preventing current leakage degradation. The ledge also plays a significant
role in the reduction of 1/f noise. All of Knowledge*ON’s HBT processes
currently include the ledge.
Ledge
formation for passivation on the extrinsic base region
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