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The value of BVceo is important in power amplifier (PA) especially for High power demanding
applications such as Global System for Mobile Communications (GSM) and Base Stations.
The High breakdown voltage gives flexibility in MMIC design of high power.



Ideally meets the ruggedness requirement in GSM specifications
(VSWR 10:1 with all Phase at Pin=12dBm, Vcc=5V)
Excellent response characteristics of frequency: fT > 30 GHz, fmax > 80GHz
Power Added Efficiency (PAE): 47% - in case of 4 finger 2X20 devices
Gain: 22dB - in case of 4 finger 2X20 devices
Suitable for High Power circuit design

This high breakdown voltage shall be emphasized again as the important parameter to prevent both circuit and device level failures.

For PA of GSM, DCS, and base station applications, we offer High Power HBT model
:BVceo = 20 ~ 23 V, fT > 30 GHz, fmax > 80GHz, DC gain = ~ 90

Fig.1
Breakdown voltage of high power device
   
Fig.2
Common emitter short circuit current gain
(H21) and unilateral power gain (U) of
2 x 20 um2 x 2-finger device at Ic = 25 mA
with Vce = 3.5 V
   
Fig.3
Dependence of current gain cut-off
frequency (fT) and maximum oscillation frequency (fMax) on collector current of
2 x 20 um2 x 2-finger device

> VCE = 3.5 V, IC = 35 mA
> Frequency = 1.8 GHz
> P1dB,out = 16.1 dBm
> PAE @ 1dB = 31.9 %
> Linear Gain = 23.2 dB
   

Fig.4
Power characteristics of
2 x 20 um2 x 2-finger device